Thin film transistor for antistatic circuit and method for fabri

Details Thin film transistor for antistatic circuit and method for fabri Thin film transistor for antistatic circuit and method for fabri

1996-12-27

1998-09-15

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438529, 438965, H01L 21336

Patent

active

058077286

ABSTRACT:
A thin film transistor for an antistatic circuit includes: wells formed on a silicon substrate; insulating layers for electrical isolation between electrodes formed within the wells; low density impurity diffused regions respectively interposed between the insulating layers; a first high-density impurity diffused region formed within one low-density impurity diffused region; a second high-density impurity diffused region formed within the other low-density impurity diffused region; interlevel insulating layers formed on the insulating layers and the low-density impurity diffused layers; and metal gate electrodes formed on the low-density impurity diffused layers and the interlevel insulating layers; at least one of the first high-density impurity diffused region and the second high-density impurity diffused region being arranged to overlap an active region, inward from outside edges of the active region.

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