Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-02
2006-05-02
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000, C257S500000, C257S501000
Reexamination Certificate
active
07038283
ABSTRACT:
In a case of a liquid crystal display apparatus, a gate insulating film of a TFT driven at a low voltage (3.3 V or 5 V) is constituted by one insulating film, and a thickness thereof is set to, for example, 30 nm. This TFT has a structure in which LDD regions (low concentration impurity regions) are not provided. A TFT having a CMOS structure, which is driven at a high voltage (18 V), has a gate insulating film constituted by two insulating films having a thickness of, for example, 130 nm in total. In an n-type TFT, a low concentration impurity region is provided on a drain side. A p-type TFT has a structure having no LDD region. A pixel TFT has a gate insulating film constituted by two insulating films, and LDD regions provided in both of its source/drain.
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Hotta Kazushige
Mishima Yasuyoshi
Nagahiro Yoshio
Ohgata Koji
Sasaki Nobuo
Fujitsu Display Technologies Corporation
Greer Burns & Crain Ltd.
Ngo Ngan V.
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