Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Pham, Hoai (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S149000
Reexamination Certificate
active
07015548
ABSTRACT:
A thin film transistor array panel is provided, which includes: an insulating substrate; a gate line formed on the substrate; a plurality of storage conductors formed on the substrate, each storage conductor including a plurality of branches; a gate insulating layer formed on the gate line and the storage conductor; a semiconductor layer formed on the gate insulating layer; a data conductor formed on the semiconductor layer; a passivation layer formed on the data conductor; and a pixel electrode formed on the passivation layer, wherein at most one of the branches of each storage conductor has an isolated end.
REFERENCES:
patent: 6554407 (2003-04-01), Ikeda et al.
patent: 6600540 (2003-07-01), Yamakita et al.
patent: 2002/0195609 (2002-12-01), Yoshitake et al.
patent: 2003/0007108 (2003-01-01), Hwang et al.
Park Woon-Yong
Song Yu-Ri
Farahani Dana
Pham Hoai
Samsung Electronics Co,. Ltd.
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