Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-06-14
2005-06-14
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S153000, C438S157000, C438S161000, C438S197000, C438S257000
Reexamination Certificate
active
06905917
ABSTRACT:
A method of fabricating a thin film transistor array panel for a liquid crystal display is provided. A gate line assembly is formed on an insulating substrate. The gate line assembly includes gate lines and gate electrodes connected to the gate lines. A gate insulating layer is formed on the insulating substrate having the gate line assembly. A semiconductor layer is formed on the gate insulating layer. A data line assembly is formed, the data line assembly includes data lines crossing over the gate lines, source electrodes connected to the data lines and placed adjacent to the gate electrodes, and drain electrodes placed opposite to the source electrodes with respect to the gate electrodes. A protective layer is deposited onto the insulating substrate having the data line assembly. The protective layer is patterned to form first contact holes exposing the drain electrodes. Pixel electrodes are formed on the protective layer such that the pixel electrodes are electrically connected to the drain electrodes, wherein one of the gate line assembly and the data line assembly further includes a low resistance conductive layer.
REFERENCES:
patent: 6300152 (2001-10-01), Kim
patent: 6387737 (2002-05-01), Yamazaki et al.
patent: 6586286 (2003-07-01), Park et al.
Jeong Chang-Oh
Song Jean-Ho
F.Chau & Associates LLC
Louie Wai-Sing
Pham Long
Samsung Electronics Co,. Ltd.
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