Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2004-07-14
2009-06-16
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C349S141000, C257SE21414
Reexamination Certificate
active
07547588
ABSTRACT:
A thin film transistor (“TFT”) array panel is provided, which includes: first and second gate lines transmitting gate signals to adjacent pixel rows and disposed adjacent to each other; a data line insulated from the first and the second gate lines and the data line; a first thin film transistor connected to the first gate line and the data line and including a first drain electrode overlapping the second gate line; a second TFT connected to the second gate line and the data line, disposed opposite the first TFT with respect to the data line, and including a second drain electrode overlapping the first gate line; a first pixel electrode connected to the first drain electrode and overlapping the second gate line; and a second pixel electrode connected to the second electrode and overlapping the first gate line.
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PCT International Search Report; PCT/KR2004/001747; Dated: Oct. 26, 2004.
Written Opinion of the International Searching Authority of Corresponding PCT Application: PCT/KR2004/001747; Dated: Oct. 26, 2004.
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Toledo Fernando L
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