Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-20
2010-10-19
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S439000, C257S443000, C257SE27112, C257SE27125, C257SE29117, C257SE29145, C257SE29151, C257SE29182, C349S038000, C349S106000
Reexamination Certificate
active
07816712
ABSTRACT:
A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.
REFERENCES:
patent: 6912024 (2005-06-01), Kim et al.
patent: 2005/0263768 (2005-12-01), Ahn
patent: 2006/0138426 (2006-06-01), Yoo et al.
patent: 2007/0013820 (2007-01-01), Jeoung
Choung Jong-Hyun
Hong Sun-Young
Kim Bong-Kyun
Lee Byeong-Jin
Park Hong-Sick
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
Tran Long K
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