Thin film transistor and semiconductor device and method for for

Details Thin film transistor and semiconductor device and method for for Thin film transistor and semiconductor device and method for for

1996-11-06

1999-12-28

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, H01L 2184

Patent

active

060080760

ABSTRACT:
A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800.degree. C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.

REFERENCES:
patent: 4597160 (1986-07-01), Ipri
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5254208 (1993-10-01), Zhang
patent: 5294238 (1994-03-01), Fukada et al.
Wolf et al., "Silicon Processing for the VLSI Era", vol. I, pp. 468-473, 1986.

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