Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-02
2006-05-02
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S517000, C257S066000, C257S347000, C349S043000, C349S044000, C349S046000, C349S047000
Reexamination Certificate
active
07037769
ABSTRACT:
The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes14and15disposed at a specified interval above an insulating substrate11and formed by printing-and-plating; an a-Si film16disposed for the source and drain electrodes14and15; a gate insulating film17laminated on the a-Si film16; and a gate electrode18laminated on the gate insulating film17and formed by printing-and-plating. The a-Si film16and the gate insulating film17have an offset region20that uniformly extends beyond the dimensions of the gate electrode18.
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Fryer Peter M.
Tsujimura Takatoshi
Wisnieff Robert L.
International Business Machines - Corporation
Kang Donghee
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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