Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-28
2011-06-28
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21411, C257SE21421
Reexamination Certificate
active
07968387
ABSTRACT:
Provided are a thin film transistor (TFT) capable of increasing ON current and decreasing OFF current values, a TFT substrate having the polysilicon TFT, a method of fabricating the polysilicon TFT, and a method of fabricating a TFT substrate having the polysilicon TFT. The polysilicon TFT substrate includes a gate line and a data line defining a pixel region, a pixel electrode formed in the pixel region, and a TFT including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a polysilicon active layer forming a channel between the source and drain electrodes. The polysilicon active layer includes a channel region on which the gate electrode is superposed, source and drain regions connected to the source and drain electrode, respectively, and at least two lightly doped drain (LDD) regions y formed between the source region and the channel region and between the drain region and the channel region. The LDD regions have an impurity concentration different from each other.
REFERENCES:
patent: 6617644 (2003-09-01), Yamazaki et al.
patent: 6773996 (2004-08-01), Suzawa et al.
patent: 2002/0105033 (2002-08-01), Zhang
patent: 2002/0149056 (2002-10-01), Ohtani et al.
F. Chau & Associates LLC
Garber Charles D
Isaac Stanetta D
Samsung Electronics Co,. Ltd.
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