Thin film transistor and fabricating method thereof

Details Thin film transistor and fabricating method thereof Thin film transistor and fabricating method thereof

2005-07-26

2005-07-26

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S271000, C438S587000, C438S588000

Reexamination Certificate

active

06921698

ABSTRACT:
A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.

REFERENCES:
patent: 6323521 (2001-11-01), Seo
patent: 6396106 (2002-05-01), Kim et al.
patent: 6819383 (2004-11-01), Chae et al.

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