Thin film transistor and display panel having the same

Details Thin film transistor and display panel having the same Thin film transistor and display panel having the same

2008-06-05

2010-12-21

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE33065, C257SE29113

Reexamination Certificate

active

07855405

ABSTRACT:
A thin film transistor includes a gate part which includes a gate electrode and a light blocking electrode extending from the gate electrode. The light blocking electrode prevents a light provided from beneath the gate electrode from being guided to a semiconductor layer. The light blocking electrode is overlapped by two source electrodes and a drain electrode arranged between the two source electrodes, all of which have an I-shape. The width of the light blocking electrode is selected so that a parasitic capacitance between a source part and the gate part may be controlled. Thus, a photocurrent of the thin film transistor may be reduced, and a kickback voltage difference between pixels in the display panel may also be reduced.

REFERENCES:
patent: 5811846 (1998-09-01), Miura et al.
patent: 2005/0162579 (2005-07-01), Jeong et al.
patent: 6-67199 (1994-03-01), None
patent: 2002-190605 (2002-07-01), None
patent: 2004-274050 (2004-09-01), None
patent: 2005-134504 (2005-05-01), None
Patent Abstracts of Japan, Publication No. 06-067199, Mar. 11, 1994, 1 p.
Patent Abstracts of Japan, Publication No. 2002-190605, Jul. 5, 2002, 1 p.
Patent Abstracts of Japan, Publication No. 2004-274050, Sep. 30, 2004, 1 p.
Patent Abstracts of Japan, Publication No. 2005-134504, May 26, 2005, 1 p.

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