Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-05-17
2005-05-17
Chaudhari, Chandra (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000
Reexamination Certificate
active
06893908
ABSTRACT:
A thin film transistor array substrate includes a substrate, a gate wire with a gate line and a gate electrode formed on the substrate, a gate insulating layer covering the gate wire, and a semiconductor pattern formed on the gate insulating layer. A data wire is formed on the gate insulating layer and the semiconductor pattern with a data line, and a source electrode and a drain electrode. The data wire bears a multiple-layered structure having a metallic layer and an intermetallic compound layer. A protective layer is formed on the data wire and the semiconductor pattern. A pixel electrode is formed on the protective layer while contacting the drain electrode through a contact hole.
REFERENCES:
patent: 5990986 (1999-11-01), Song et al.
patent: 6255706 (2001-07-01), Watanabe et al.
patent: 6317173 (2001-11-01), Jung et al.
patent: 6376861 (2002-04-01), Yaegashi et al.
patent: 6377323 (2002-04-01), Ono et al.
patent: 6674495 (2004-01-01), Hong et al.
patent: 6696324 (2004-02-01), Hong et al.
patent: 20010019125 (2001-09-01), Hong et al.
Kong Hyang-Shik
You Chun-Gi
Chaudhari Chandra
McGuire Woods LLP
Samsung Electronics Co,. Ltd.
Vesperman William C.
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