Thin-film switching device having chlorine-containing active reg

Details Thin-film switching device having chlorine-containing active reg Thin-film switching device having chlorine-containing active reg

1997-05-20

1999-10-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

257 56, 257 66, H01L 2978

Patent

active

059703253

ABSTRACT:
A thin-film switching device includes an active region including noncrystalline silicon, e.g., hydrogenated amorphous silicon, which includes chlorine distributed in a manner which produces a predetermined photoconductivity and a predetermined field-effect mobility in the active region. Preferably, the active region includes a plurality of hydrogenated amorphous silicon layers, at least one of which includes chlorine. In one embodiment, the plurality of hydrogenated amorphous silicon layers includes a hydrogenated amorphous silicon layer including between 0.1 ppm and 106 ppm chlorine. In another embodiment, the plurality of hydrogenated amorphous silicon layers includes a first hydrogenated amorphous silicon layer having a first chlorine concentration and a second hydrogenated amorphous silicon layer having a second chlorine concentration less than the first chlorine concentration. The first hydrogenated amorphous silicon layer includes 1 ppm to 105 ppm chlorine, and the second hydrogenated amorphous silicon layer includes less than 104 ppm chlorine. Related fabrication methods are also discussed.

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Hirano et al., "A 33-cm-Diagonal High-Resolution TFT-LCD With Fully Self-Aligned a-Si TFTs", IEICE Trans. Electron., vol. E79-C, No, 8, Aug. 1996, pp. 1103-1108.

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