Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-06-28
2005-06-28
VerSteeg, Steven (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C204S192270, C204S192280, C204S192160
Reexamination Certificate
active
06911125
ABSTRACT:
When forming an optical thin film on a surface of a bulb of a light source such as an electric lamp or a discharge lamp, a thin film whose interface/surface is less rough is formed on a base having a spheroid shape. When forming a thin film on a base2with a spheroid shape, which is disposed in a vacuum chamber4of a film-forming device and spun on its rotation axis, an interface or a surface of the thin film is made less rough and the thickness distribution of the thin film is made smaller by setting a sputtering gas pressure to be in a range from 0.04 Pa to 5.0 Pa; by using, as a sputtering gas, a mixed gas of Ar gas and N2gas in which the N2gas is present at a partial pressure ratio of 1 to 6 assuming a partial pressure of the Ar gas is 100, or a mixed gas of Ar gas, N2gas, and O2gas in which the N2gas is present at a partial pressure ratio of 1 to 6 and O2gas is present at a partial pressure ratio of 6 or less assuming a partial pressure of the Ar gas is 100; by setting an input power applied at the start of thin film formation to be the greatest throughout a sputtering process; or by applying a negative bias to the base.
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English translation of JP 9-118544 A.
Brett, J., et al., “Radiation-conserving incandescent lamps”,Journal of Illuminating Engineering Society, Jul. 1980, pp 197-203.
Hashimoto Naotaka
Omata Yuuji
Matsushita Electric - Industrial Co., Ltd.
Merchant & Gould P.C.
VerSteeg Steven
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