Thin film magnetic memory device permitting high precision...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S148000, C365S173000

Reexamination Certificate

active

06903965

ABSTRACT:
An MTJ memory cell has an access transistor which turns on in response to activation of a corresponding word line and a tunneling magneto-resistance element which has an electric resistance changing in accordance with stored data. The access transistor has a source connected to a source line for supplying a ground voltage. To restrict an off leakage current in a non-selected access transistor, each access transistor is configured with a MOS transistor having a threshold voltage that is larger than that of another MOS transistor formed on the same chip.

REFERENCES:
patent: 6504750 (2003-01-01), Baker
patent: 6570782 (2003-05-01), Brandenberger et al.
patent: 2003/0067797 (2003-04-01), Baker
patent: 2002-008369 (2002-01-01), None
R. Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, ISSCC Digest of Technical Papers, TA7.2, Feb. 2000, pp. 94-95, 128-129, 409-410.
M. Durlam, et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, ISSCC Digest of Technical Papers, TA7.3, Feb. 2000, 96-97, 130-131, 410-411.
P. K. Naji, et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM”, ISSCC Digest of Technical Papers, TA7.6, Feb. 2001, 94-95, 122-123, 404-405, 438.

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