Encapsulation for organic electronic devices

Details Encapsulation for organic electronic devices Encapsulation for organic electronic devices

2005-06-28

2005-06-28

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S787000, C438S026000, C438S029000, C438S030000, C438S048000, C438S458000

Reexamination Certificate

active

06911667

ABSTRACT:
An embodiment of the present invention pertains to encapsulating an organic electronic device by selectively depositing a catalyst layer and then exposing the catalyst layer to a monomer to produce a planarization layer. The monomer reacts only in the areas where the catalyst layer is present so there is minimal or no contamination of other areas of the organic electronic device. Selectively depositing the catalyst layer allows the resulting planarization layer to be patterned. A barrier layer is selectively deposited on at least the planarization layer.Another embodiment of the present invention pertains to encapsulating an organic electronic device by depositing a planarization layer on a transfer substrate and then allowing it to stabilize to minimize its reactivity. The planarization layer is transferred from the transfer substrate onto at least an active area of the organic electronic device. A barrier layer is selectively deposited on at least the planarization layer.

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