Thin film forming method

Details Thin film forming method Thin film forming method

2006-10-25

2009-02-03

Chen, Bret (Department: 1792)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S579000, C427S255290, C117S092000, C117S103000, C117S108000

Reexamination Certificate

active

07485349

ABSTRACT:
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

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