Thin film forming method

Details Thin film forming method Thin film forming method

2006-11-28

2006-11-28

Chen, Bret (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S579000, C427S255290

Reexamination Certificate

active

07141278

ABSTRACT:
A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4767494 (1988-08-01), Kobayashi
patent: 4851095 (1989-07-01), Scobey et al.
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 5071670 (1991-12-01), Kelly
patent: 5166092 (1992-11-01), Mochizuki et al.
patent: 5225366 (1993-07-01), Yoder
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5356673 (1994-10-01), Schmitt et al.
patent: 5370738 (1994-12-01), Watanabe et al.
patent: 5374570 (1994-12-01), Nasu
patent: 5395791 (1995-03-01), Cheng
patent: 5443647 (1995-08-01), Aucoin et al.
patent: 5483919 (1996-01-01), Yokoyama et al.
patent: 5521126 (1996-05-01), Okamura et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5769950 (1998-06-01), Takasu et al.
patent: 5855680 (1999-01-01), Soininen et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6391803 (2002-05-01), Kim et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6723642 (2004-04-01), Lim et al.
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6752869 (2004-06-01), Lee et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 1-305524 (1989-12-01), None
patent: P2000-0003455 (2000-01-01), None
patent: P2000-0049298 (2000-08-01), None
patent: P2000-0060332 (2000-10-01), None
de Keijser, M. et al., “Atomic Layer Epitaxy of Gallium Arsenide with the use of Atomic Hydrogen,” Appl. Phys. Lett., vol. 58, p. 1187, 1991.
English language abstract for Korea Published Application No. P2000-0060332.
English language abstract for Korea Published Application No. P2000-0003455.
English language abstract for Korea Published Application No. P2000-0049298.

Affiliated with

Also associated with

Rating

Thin film forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film forming method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3650795