Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-04-25
2006-04-25
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C204S298030, C204S298110, C427S282000, C118S720000, C118S504000
Reexamination Certificate
active
07033461
ABSTRACT:
The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus. The method comprises the first step of first forming a thin film to a predetermined percentage out of thickness through an opening8ain a shutter8, the second step of then using a film thickness monitor10to measure the distribution of the thickness of the thin film formed in the first step, and the third step of reducing a film formation rate by an opening8bin the shutter8between a substrate4and a sputtering cathode6as compared to that of the first step and correcting the thickness of the thin film by an opening13ain the first film thickness correcting plate13between the substrate4and the sputtering cathode6corresponding to the distribution of the film thickness measured by the film thickness monitor10in the second step. Then, the second step is carried out again, during which the film thickness monitor10is used to measure the distribution of the thickness of the thin film formed in the third step. Further, the third and second steps are repeatedly carried out.
REFERENCES:
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patent: 4311725 (1982-01-01), Holland
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patent: 6547939 (2003-04-01), Hsueh et al.
Taiwanese Office Action dated Aug. 27, 2004.
Hanzawa Kouichi
Ikeda Satoshi
Ishibashi Satoru
Kawamura Hiroaki
Matsumoto Takafumi
McDonald Rodney G.
ULVAC Inc.
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