Thin film formation on semiconductor wafer

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

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438761, 427251, 4272555, 4272557, C23C 1606

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active

060048859

ABSTRACT:
A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

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