Thin film diode integrated with chalcogenide memory cell

Details Thin film diode integrated with chalcogenide memory cell Thin film diode integrated with chalcogenide memory cell

2006-09-26

2006-09-26

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S542000, C438S659000, C438S702000, C438S703000, C438S761000, C438S783000

Reexamination Certificate

active

07112484

ABSTRACT:
An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to selectively form a conductive pathway under the influence of an applied voltage. In one embodiment, both the diode and the memory cell comprise a chalcogenide glass, such as germanium selenide (e.g., Ge2Se8or Ge25Se75). The first diode element comprises a chalcogenide glass layer having a first conductivity type, the second diode element comprises a chalcogenide glass layer doped with an element such as bismuth and having a second conductivity type opposite to the first conductivity type and the memory cell comprises a chalcogenide glass element with silver ions therein. In another embodiment, the diode comprises silicon and there is a diffusion barrier layer between the diode and the chalcogenide glass memory element. Methods of fabricating integrated programmable conductor memory cell and diode devices are also disclosed.

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