Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-18
2006-04-18
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S251000, C438S393000, C438S394000
Reexamination Certificate
active
07029971
ABSTRACT:
Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.
REFERENCES:
patent: 5198269 (1993-03-01), Swartz et al.
patent: 5271955 (1993-12-01), Maniar
patent: 5342648 (1994-08-01), MacKenzie et al.
patent: 5384294 (1995-01-01), Teowee et al.
patent: 5391393 (1995-02-01), Maniar
patent: 5962654 (1999-10-01), Duncombe et al.
patent: 6287673 (2001-09-01), Katsir et al.
patent: 6337032 (2002-01-01), Chivukula et al.
patent: 6541137 (2003-04-01), Kingon et al.
patent: 6631551 (2003-10-01), Bowles et al.
patent: 6638387 (2003-10-01), Cruz
patent: 2002/0195612 (2002-12-01), Farrell
patent: WO 01/67465 (2001-09-01), None
D. M. Smyth, The Defect Chemistry of Metal Oxides, Oxford University Press, 2000, pp. 252-282.
M. N. Kamalasaan, N. D. Kumar and S. Chandra, Dielectric and ferroelectric properties of BaTiO3 thin films grown by the sol-gel process, J. Appl. Phys. 74 (9), Nov. 1, 1983, pp. 5679-5686.
Q. Zou, H. E. Ruda and B. G. Yacobi, Dielectric properties of lead zirconate titanate thin films deposited on metal foils, Applied Physics Letters, vol. 77, No. 7, Aug. 14, 2000, pp. 1038-1040.
Q. Zou, H. E. Ruda and B. G. Yacobi, Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers, Applied Physics Letters, vol. 78, No. 9, Feb. 26, 2001, pp. 1282-1284.
W. J. Lee and H. G. Kim, Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si, J. Appl. Phys. 80 (10), Nov. 15, 1996, pp. 5891-5894.
M. H. Frey and D. A. Payne, Nanocrystalline barium titanate: Evidence for the absence of ferroelectricity in sol-gel derived thin-layer capacitors, Appl. Phys. Lett. 63 (20), Nov. 15, 1993, pp. 2753-2755.
B. Lee and J. Zhang, Preparation, structure evolution and dielectric properties of BaTiO3 thin films and powders by an aqueous sol-gel process, Thin Solid Films 388 (2001) 1-7-113.
X. Li and W. H. Shih, Size Effects in Barium Titanate Particles and Clusters, J. Am. Comm. Soc. 80 (11) 1997, pp. 2844-2852
M. N. Kamalasanan, N. D. Kumar, and S. Chandra, Structural, optical, and dielectric properties of sol-gel derived SrTiO3 thin films, J. Appl. Phys. 74 (1), Jul. 1993, pp. 679-686.
J. P. Maria, K. Cheek, S. Streiffer, S. H. Kim, G. Dunn and A. Kingon, Lead Zirconate Titanate Thin Films on Base-Metal Foils: An Approach for Embedded High-Permittivity Passive Components, J. Am. Ceram. Soc. vol. 84, No. 10, (2001), pp. 2436-2438.
M. H. Frey and D. A. Payne, Grain-size effect on structure and phase transformations for barium titanate, Physical Review B, vol. 54, No. 5, Aug. 1, 1996, pp. 3158-3168.
E. Dien, J. B. Briot, M. Lejeune and A. Smith, Relationship Between Processing and lectrical Behavior of BST Films Deposited by Spin Coating, Journal of the European Ceramic Society, vol. 19, (1999), pp. 1349-1352.
D. M. Tahan, A. Safari and L. C. Klein, Preparation and Characterization of BaxSr1-xTiO3 Thin Films by a Sol-Gel Technique, J. Am. Ceram. Soc., vol. 79, No. 6, (1996), pp. 1593-1598.
R. W. Schwartz, P. G. Clem, J. A. Voigt, E. R. Byhoff, M. Van Stry, T. J. Headley and N. A. Missert, Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films, J. Am. Ceram. Soc., vol. 82, No. 9, (1999), pp. 2359-2367.
M. Losurdo, P. Capezzuto, G. Bruno, G. Perna and V. Capozzi, N2-H2 remote plasma nitridation for GaAs surface passivaton, Applied Physics Letters, vol. 81, No. 1, Jul. 1, 2002, pp. 16-18.
M.N. Kamalasanan, N. Deepak kumar and Subhas Chandra, Structural and microstructural evolution of barium titanate thin films deposited by the sol-gel process, J. Appl. Phys. 76 (8), Oct. 15, 1994, pp. 4603-4609.
N. Deepak Kumar, M.N. Kamalasanan and Subhas Chandra, Metalorganic chemical vapor deposition technique for growing c-axis oriented ZnO thin films in atmospheric pressure air, Appl. Phys. Lett. 65 (11), Sep. 12, 1994, pp. 1373-1375.
J. T. Dawley and P. G. Clem, Dielectric properties of random and <100> oriented SrTiO3 and (Ba,Sr)TlO3 thin films fabricated on <100> nickel tapes, Applied Physics Letters, vol. 81, No. 16, Oct. 14, 2002, pp. 3028-3030.
G. Arlt, D. Hennings and G. De With, Dielectric properties of fine-grained barium titanate ceramics, J. Appl. Phys. 58 (4), Aug. 15, 1985, pp. 1619-1625.
Angus I. Kingon, Taeyun Kim, Jon-Paul Maria, and Robert Croswell, Integation of Thin Film Capacitors into Polymer-Based Wiring Boards or MCM-Ls, NC State University, Department of Materials Science and Engineering. Jun. 13, 2002.
Angus I. Kingon, Taeyun Kim, Paula Vilarinho, Jon-Paul Maria, and Robert Croswell, Thin Film Capacitors Embedded into High Density Printed Circuit Boards, NC State University, Department of Materials Science and Engineering, Oct. 10, 2001.
Borland William J.
Ihlefeld Jon Fredrick
Kingon Angus Ian
Maria Jon-Paul
E. I. du Pont de Nemours and Company
Le Dung A.
Norch Carolina State University
LandOfFree
Thin film dielectrics for capacitors and methods of making... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film dielectrics for capacitors and methods of making..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film dielectrics for capacitors and methods of making... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3572562