Coating apparatus – Gas or vapor deposition
Reexamination Certificate
2005-04-26
2005-04-26
Lund, Jeffrie R. (Department: 1763)
Coating apparatus
Gas or vapor deposition
C156S345290
Reexamination Certificate
active
06884297
ABSTRACT:
Provided is a thin film deposition reactor, including a reactor block having a deposition space, a wafer block, a top lid for covering and sealing the reactor block, a showerhead for spraying a reaction gas on the wafer block, and an exhaust line through which gases are exhausted from the reactor block. A lower pumping baffle and an upper pumping baffle are stacked on a bottom of the reactor block between an outer circumference of the wafer block and an inner circumference of the reactor block. A lower pumping region is formed between the lower pumping baffle and an inner sidewall of the reactor block. An upper pumping region is formed between the upper pumping baffle and the inner sidewall of the reactor block. The deposition space is connected to the upper pumping region by a plurality of upper pumping holes formed in the upper pumping baffle, and the upper pumping region is connected to the lower pumping region by a plurality of lower pumping holes formed in the lower pumping baffle. The lower pumping region is connected to the exhaust line.
REFERENCES:
patent: 5935338 (1999-08-01), Lei et al.
patent: 6117244 (2000-09-01), Bang et al.
patent: 6120605 (2000-09-01), Sato
patent: 6183563 (2001-02-01), Choi et al.
patent: 6364954 (2002-04-01), Umotoy et al.
patent: 6402848 (2002-06-01), Horiguchi et al.
patent: 6582522 (2003-06-01), Luo et al.
patent: 6586343 (2003-07-01), Ho et al.
patent: 6656838 (2003-12-01), Watanabe et al.
patent: 6802906 (2004-10-01), Jin et al.
patent: 20020023588 (2002-02-01), Yamamuka et al.
patent: 20030041971 (2003-03-01), Kido et al.
patent: 20030221780 (2003-12-01), Lei et al.
patent: 20040149212 (2004-08-01), Cho et al.
patent: 20040187780 (2004-09-01), Park et al.
Baik Choon Kum
Chang Ho Seung
Lim Hong Joo
Park Young Hoon
Cantor & Colburn LLP
IPS Ltd.
Lund Jeffrie R.
LandOfFree
Thin film deposition reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film deposition reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film deposition reactor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3440935