Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-04
2005-10-04
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S303000, C257S623000, C257S301000, C257S295000
Reexamination Certificate
active
06952029
ABSTRACT:
A method for ion implantation of high dielectric constant materials with dopants to improve sidewall stoichiometry is disclosed. Particularly, the invention relates to ion implantation of (Ba,Sr)TiO3(BST) with Ti dopants. The invention also relates to varying the ion implantation angle of the dopant to uniformly dope the high dielectric constant materials when they have been fabricated over a stepped structure. Additionally, the invention relates to forming a capping layer over a horizontal portion of the BST film to reduce excess dopant from being implanted into the horizontal section of the BST film. The invention also relates to integrated circuits having a thin film high dielectric material with improved sidewall stoichiometry used as an insulating layer in a capacitor structure.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Lee Eugene
Micro)n Technology, Inc.
Thomas Tom
LandOfFree
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