Thin film capacitor and fabrication method thereof

Details Thin film capacitor and fabrication method thereof Thin film capacitor and fabrication method thereof

2008-07-24

2009-11-17

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S256000, C438S239000, C438S250000, C438S508000

Reexamination Certificate

active

07618859

ABSTRACT:
A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are uniform along the growth direction of the dielectric film while the concentration of the Ba cation is non-uniform along the growth direction such that a reduced Ba-I region in which the average concentration of perovskite type Ba cations (Ba-I) is less than the average concentration of non-perovskite type Ba cations (Ba-II) exists at or near the boundary between at least one of the top and bottom electrodes, with ratio R=(atm % Ba-I)/[(atm % Ba-I)+(atm % Ba-II)] within a range of 0.1<R<0.2.

REFERENCES:
patent: 6624462 (2003-09-01), Kohara et al.
patent: 2006/0094185 (2006-05-01), Jeong et al.
patent: 2929435 (1999-08-01), None

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