Thin ferroelectric film element having a multi-layered thin ferr

Details Thin ferroelectric film element having a multi-layered thin ferr Thin ferroelectric film element having a multi-layered thin ferr

1998-08-12

1999-12-07

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257414, 257421, H01L 2972

Patent

active

059988193

ABSTRACT:
A thin ferroelectric film element comprises upper and lower thin electrode films and a thin ferroelectric film formed on a substrate, wherein the thin ferroelectric film comprises at least three layers in which at least one layer has a composition of constituent elements different from those of the other layers and a resistivity higher than that of the other layers, and at least two layers of the others are the same composition of constituent element.

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