Thin body semiconductor devices having improved contact...

Details Thin body semiconductor devices having improved contact... Thin body semiconductor devices having improved contact...

2009-09-16

2011-12-27

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S525000

Reexamination Certificate

active

08084330

ABSTRACT:
Embodiments of a method for fabricating a semiconductor device are provided. In one embodiment, the method includes the step of producing a partially-completed semiconductor device including a substrate, source/drain (S/D) regions, a channel region between the S/D regions, a gate stack over the channel region, and sidewall spacers laterally adjacent the gate stack. The method further includes the steps of amorphizing the S/D regions, depositing a silicide-forming material over the amorphized S/D regions, and heating the partially-completed semiconductor device to a predetermined temperature at which the silicide-forming material reacts with the amorphized S/D regions.

REFERENCES:
patent: 6787406 (2004-09-01), Hill et al.
patent: 2007/0232003 (2007-10-01), Loo et al.
patent: 2009/0057759 (2009-03-01), Obradovic et al.
patent: 2009/0146223 (2009-06-01), Jain et al.
A. Kaneko, et al. “High-Performance FinFET with Dopant-Segregated Schotty Source/Drain,” IEEE, 2006.

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