Thick plated interconnect and associated auxillary interconnect

Details Thick plated interconnect and associated auxillary interconnect Thick plated interconnect and associated auxillary interconnect

1997-12-17

2000-02-01

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257762, 257758, H01L 2348, H01L 2352, H01L 2940

Patent

active

060206403

ABSTRACT:
A thick plated interconnect (80) comprising a copper lead (50) and a bonding cap (84) coupled to the copper lead (50). The bonding cap (84) may include a bondable member (86) formed from a bondable layer (62) comprising aluminum. A barrier member (88) may be formed from a barrier layer (60). The barrier member (88) may be disposed between the bondable member (86) and the copper lead (50).

REFERENCES:
patent: 5468984 (1995-11-01), Efland et al.
patent: 5656858 (1997-08-01), Kondo et al.
patent: 5665991 (1997-09-01), Efland et al.
patent: 5705857 (1998-01-01), Farooq et al.
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5793112 (1998-08-01), Hasegawa et al.
08/711,138 FWC of 08/333,174, Multiple Transistor Integrated Circuit with Thick Copper Interconnect, originally filed Nov. 02, 1994, pending.
08/903,970 FWC of 07/850,601, Method for Current Ballasting and Busing over Active Device Area Using a Multi-Level Conductor Process, originally filed Mar. 13, 1992, pending.
08/864,386, Plated Copper and Plated Copper with Plated Nickel Cap Tnterconnect Metallization on a Silicon Integrated Circuit, filed May 28, 1997, pending.

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