Thermally stable low resistance contact

Details Thermally stable low resistance contact Thermally stable low resistance contact

1988-08-16

1989-07-18

James, Andrew J.

357 67, H01L 2354, H01L 2314

Patent

active

048498025

ABSTRACT:
In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.

REFERENCES:
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"The Role of Compound Formation and Heteroepitaxy in Indium-Based Ohmic Contacts to GaAs"-Lakhani-J. Appl. Phys., 56 (6), Sep. 15, 1984, pp. 1888-1891.
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D. Martin, "In/Pt Ohmic, Contacts to GaAs", Journnal of Applied Physics, 58(7), Oct. 1, 1985, pp. 2659-2661.
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