Thermally stable BiCMOS fabrication method and bipolar...

Details Thermally stable BiCMOS fabrication method and bipolar... Thermally stable BiCMOS fabrication method and bipolar...

2006-02-24

2008-10-21

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C257S351000

Reexamination Certificate

active

07439119

ABSTRACT:
A method for forming BiCMOS integrated circuits and structures formed according to the method. After forming doped wells and gate stacks for the CMOS devices and collector and base regions for the bipolar junction transistor, an emitter layer is formed within an emitter window. A dielectric material layer is formed over the emitter layer and remains in place during etching of the emitter layer and removal of the etch mask. The dielectric material layer further remains in place during source/drain implant doping and activation of the implanted source/drain dopants. The dielectric material layer functions as a thermal barrier, to limit out-diffusion of the emitter dopants during the activation step.

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