Thermally-assisted switching of magnetic memory elements

Details Thermally-assisted switching of magnetic memory elements Thermally-assisted switching of magnetic memory elements

2008-03-04

2008-03-04

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S211000, C365S212000, C365S213000

Reexamination Certificate

active

07339817

ABSTRACT:
A magnetic memory element is written to by heating the memory element and applying at least one magnetic field to the memory element.

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