Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2008-05-27
2008-05-27
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S707000, C257S712000, C257S713000, C257S720000, C257SE33075, C257SE23051, C257SE23101, C257SE23109, C361S712000, C361S713000
Reexamination Certificate
active
07378730
ABSTRACT:
Layered interface materials described herein include at least one pulse-plated thermally conductive material, such as an interconnect material, and at least one heat spreader component coupled to the at least one pulse-plated thermally conductive material. A plated layered interface material having a migration component is also described herein and includes at least one pulse-plated thermally conductive material; and at least one heat spreader component, wherein the migration component of the plated layered interface material is reduced by at least 51% as compared to the migration component of a reference layered interface material. Another layered interface material described herein includes: a) a thermal conductor; b) a protective layer; c) a layer of material accept solder and prevent the formation of oxides; and d) a layer of solder material. Methods of forming layered interface materials are described herein that include: a) providing a pulse-plated thermally conductive interface material; b) providing a heat spreader component; and c) physically coupling the thermally conductive interface material and the heat spreader component. At least one additional layer, including a substrate layer, a surface, adhesive, a compliant fibrous component or any other suitable layer or a thermal interface material, can be coupled to the layered interface material.
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Fery Mark
Subramanian Jai
Clark Jasmine
Honeywell International , Inc.
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