Thermal control of semiconductor wafer during reactive ion etchi

Details Thermal control of semiconductor wafer during reactive ion etchi Thermal control of semiconductor wafer during reactive ion etchi

1995-09-29

1997-03-11

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, H01L 2100

Patent

active

056097204

ABSTRACT:
Apparatus and method for obtaining improved control of the temperature of a semiconductor wafer over its area during plasma processing including reactive ion etching (RIE) and similar processing. RIE reactor apparatus is provided with a novel chuck arrangement both for holding and for controlling the temperature of a wafer during processing. A top face of a chuck (either mechanical or electrostatic), against which the wafer is held, is configured into a plurality of zones into which zone coolant gas, such as helium, is admitted. The zone coolant gas passes through narrow channels between the top face of the chuck and the Underside of the wafer. Heat transfer from the wafer through the zone coolant gas and to the body of the chuck is controlled zone by zone by separately setting the pressure of zone coolant gas in each of the zones. By properly choosing pressures of zone coolant gas in the respective zones the temperature across the area from the center to the rim of both small and large diameter wafers (e.g., 8 inches) can be held substantially constant even though power dissipation per unit of area within the wafer during processing varies considerably from the center to the rim.

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