Testing semiconductor devices for data retention

Details Testing semiconductor devices for data retention Testing semiconductor devices for data retention

1998-12-11

2000-07-18

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Testing

365218, 36518529, G11C 700

Patent

active

060916524

ABSTRACT:
A method of screening EEPROMs for data retention quality employs a UV source which is arranged to be impinged upon the devices while in wafer form, at or near an electrical probe station. Known data is stored in memory cells on an EEPROM chip while the chip is in wafer form, at a probe station. The wafer is then moved beneath a UV silo near the probe station and exposed to UV light, for a period of time and at an intensity which is sufficient to cause leakage of charge from potentially leaky floating gates. The wafer is again subjected to electrical probe where the amount of change in retained charge is detected. From this test, an indication of the charge retention ability of the devices is obtained. The UV light increases the energy state of the stored charge thus accelerating the decay of the stored charge located on the floating gates in the EEPROM device. Bits that have inherent leakage paths decay more rapidly.

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IBM Technical Disclosure Bulletin; Dynamic Software Programmable Gate Array; May 1996, vol. 39, No. 5, pp. 45-46.

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