Test structure of a semiconductor device and semiconductor...

Details Test structure of a semiconductor device and semiconductor... Test structure of a semiconductor device and semiconductor...

2008-07-18

2010-12-14

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S048000, C257S356000, C257SE29242

Reexamination Certificate

active

07851864

ABSTRACT:
A test structure includes a transistor, a dummy transistor and a pad unit. The transistor is formed on a first active region of a substrate. The dummy transistor is formed on a second active region of the substrate and electrically connected to the transistor. The pad unit is electrically connected to the transistor. Plasma damage to the transistor is reduced due to the presence of dummy transistor.

REFERENCES:
patent: 6465848 (2002-10-01), Ker et al.
patent: 2003/0057476 (2003-03-01), Morita et al.
patent: 11-345885 (1999-12-01), None
patent: 2001-110866 (2001-04-01), None
patent: 1020000046760 (2000-07-01), None
patent: 1020000056067 (2000-09-01), None

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