Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2006-02-07
2006-02-07
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
Reexamination Certificate
active
06995392
ABSTRACT:
A test structure is disclosed for locating electromigration voids in a semiconductor interconnect structure having an interconnect via interconnecting a lower metallization line with an upper metallization line. In an exemplary embodiment, the test structure includes a via portion the top of the interconnect via at the upper metallization line. In addition, a line portion extends from the via portion, wherein the line portion connects to an external probing surface, in addition to a probing surface on the lower metallization line, thereby allowing the identification of any electromigration voids present in the interconnect via.
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McLaughlin Paul S.
Sullivan Timothy D.
Wang Ping-Chuan
Cantor & Colburn LLP
International Business Machines - Corporation
Jaklitsch Lisa U.
Owens Douglas W
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