Test structure for detecting defect size in a semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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C257SE21531

Reexamination Certificate

active

07132684

ABSTRACT:
A test structure and method for testing a semiconductor device are provided. The test structure including a first test pattern having a plurality of electrically separated metal patterns, a plurality of metal vias formed in opposite end portions of the respective metal patterns, and a second test pattern connected to the first test pattern through the metal vias. By using this structure, the presence, nature, and size of a metal failure can be detected by analyzing a resistance arising from the application of a test voltage to the first test pattern.

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