Test structure for characterizing junction leakage current

Details Test structure for characterizing junction leakage current Test structure for characterizing junction leakage current

2005-12-20

2005-12-20

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000, C438S227000

Reexamination Certificate

active

06977195

ABSTRACT:
For characterizing bulk leakage current of a junction, a center junction surrounded by an isolation structure is formed with a first depth. In addition, at least one periphery junction having a second depth greater than the first depth is formed in a portion of the center junction adjacent the isolation structure. A junction silicide is formed with the center and periphery junctions. The magnitude of a reverse-bias voltage across the junction silicide and the P-well is incremented for determining a critical magnitude of the reverse-bias when current through the junction silicide and the P-well reaches a threshold current density.

REFERENCES:
patent: 5455450 (1995-10-01), Leduc
patent: 6803644 (2004-10-01), Minami et al.

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