Test pattern of CMOS image sensor and method of measuring...

Details Test pattern of CMOS image sensor and method of measuring... Test pattern of CMOS image sensor and method of measuring...

2006-10-11

2010-10-05

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C438S014000, C438S016000, C257S294000, C257SE33076

Reexamination Certificate

active

07807996

ABSTRACT:
The test pattern according to the present invention consists of an opaque metal film pattern formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate and the metal film pattern, a red color filter formed on the insulating film, a planarization layer formed on the insulating film and the red color filter, and a number of micro-lenses formed on the planarization layer.

REFERENCES:
patent: 5450205 (1995-09-01), Sawin et al.
patent: 6664121 (2003-12-01), Grodnensky et al.
patent: 2001/0003446 (2001-06-01), Takafuji
patent: 2004/0241899 (2004-12-01), Brissot et al.
patent: 2005/0274871 (2005-12-01), Li et al.
patent: 2006/0000964 (2006-01-01), Ye et al.
patent: 2006/0138488 (2006-06-01), Kim

Affiliated with

Also associated with

Rating

Test pattern of CMOS image sensor and method of measuring... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Test pattern of CMOS image sensor and method of measuring..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test pattern of CMOS image sensor and method of measuring... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4242173