Test mode for IPP current measurement for wordline defect...

Details Test mode for IPP current measurement for wordline defect... Test mode for IPP current measurement for wordline defect...

2007-08-14

2007-08-14

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S185090, C365S230060

Reexamination Certificate

active

11322252

ABSTRACT:
A semiconductor integrated circuit memory device, and test method for a memory device are provided in which an external wordline voltage is applied to a wordline of the memory device. A current on the wordline is measured as a result of application of the externally supplied wordline voltage. The measured current is compared to a reference value to determine whether the wordline has a defect, in particular a short-circuit defect. A tester device is connected to the memory device and supplies the external wordline voltage. The current measurement and comparison may be made internally by circuitry on the memory device or externally by circuitry in a tester device.

REFERENCES:
patent: 5786702 (1998-07-01), Stiegler et al.
patent: 5848018 (1998-12-01), McClure
patent: 6781902 (2004-08-01), Oumiya et al.
patent: 7158415 (2007-01-01), Bedarida et al.
patent: 2002/0054514 (2002-05-01), Kajigaya et al.

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