Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-12-04
2007-12-04
Everhart, Caridad (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE21036, C430S030000
Reexamination Certificate
active
10732370
ABSTRACT:
Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.
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Bacon & Thomas PLLC
Everhart Caridad
Nanya Technology Corporation
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