Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-05
2007-06-05
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S308000, C438S592000
Reexamination Certificate
active
10826516
ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a first transistor (120) located over a semiconductor substrate (110), wherein the first transistor (120) has a metal gate electrode (135) having a work function, and a second transistor (160) located over the semiconductor substrate (110) and proximate the first transistor (120), wherein the second transistor (160) has a plasma altered metal gate electrode (175) having a different work function.
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Alshareef Husam N.
Colombo Luigi
Pacheco Rotondaro Antonio Luis
Visokay Mark R.
Brady III W. James
McLarty Peter K.
Smoot Stephen W.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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