Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-10
2011-05-10
Kerveros, James C (Department: 2117)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C327S310000
Reexamination Certificate
active
07939892
ABSTRACT:
A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.
REFERENCES:
patent: 5099143 (1992-03-01), Arakawa
patent: 5659550 (1997-08-01), Mehrotra et al.
patent: 5701024 (1997-12-01), Watt
patent: 5825603 (1998-10-01), Parat et al.
patent: 5835328 (1998-11-01), Maloney et al.
patent: 5909347 (1999-06-01), Yu
patent: 5918117 (1999-06-01), Yun
patent: 6004838 (1999-12-01), Ma et al.
patent: 6055143 (2000-04-01), Yu
patent: 6301157 (2001-10-01), Riva et al.
patent: 6532556 (2003-03-01), Wong et al.
patent: 6724226 (2004-04-01), Kim
patent: 6754107 (2004-06-01), Khouri et al.
patent: 6768685 (2004-07-01), Scheuerlein
patent: 6908821 (2005-06-01), Kim
patent: 7050328 (2006-05-01), Khouri et al.
patent: 7075763 (2006-07-01), Marr
Hoang Loc B.
Ly Anh
Nguyen Hung Q.
Nguyen Sang Thanh
Saiki William John
DLA Piper (LLP) US
Kerveros James C
Silicon Storage Technology, Inc.
LandOfFree
Test circuit and method for multilevel cell flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Test circuit and method for multilevel cell flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test circuit and method for multilevel cell flash memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2649134