Test circuit and method for multilevel cell flash memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S360000, C327S310000

Reexamination Certificate

active

07939892

ABSTRACT:
A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

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