Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-24
2006-01-24
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000
Reexamination Certificate
active
06989306
ABSTRACT:
Embodiments of the invention provide a termination structure of DMOS device and a method of forming the same. In forming the termination structure, a silicon substrate with an epitaxial layer formed thereon is provided. A body region defined by doping the epitaxial layer is then selectively etched to form a plurality of DMOS trenches therein. Thereafter, a gate oxide layer is formed over exposed surfaces in the body region and a termination oxide layer is formed to encircle the body region. Afterward, a polysilicon layer is deposited over all the exposed surfaces, and then selectively etched to form a plurality of poly gates in the DMOS trenches and a polysilicon plate having an extending portion toward the body region over the termination oxide layer. By using the termination polysilicon layer as an implantation mask, sources are formed in the body region. Afterward, an isolation layer and a source metal contact layer are deposited over the structure, in which the isolation layer is utilized to protect the polysilicon gates, and also the source metal contact layer is utilized to ground both the body region and the polysilicon plate.
REFERENCES:
patent: 5316959 (1994-05-01), Kwan et al.
patent: 5468982 (1995-11-01), Hshieh et al.
patent: 5578512 (1996-11-01), Tao
patent: 5904525 (1999-05-01), Hshieh et al.
patent: 5981999 (1999-11-01), Liu
patent: 6472722 (2002-10-01), Ho et al.
patent: 6884683 (2005-04-01), Hshieh et al.
Chang Chien-Ping
Chuang Chiao-Shun
Hsieh Hsin-Huang
Tseng Mao-Song
Chaudhari Chandra
Mosel Vitelic Inc.
Townsend and Townsend / and Crew LLP
LandOfFree
Termination structure of DMOS device and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Termination structure of DMOS device and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Termination structure of DMOS device and method of forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3593460