Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-21
2008-12-30
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S763000, C438S790000
Reexamination Certificate
active
07470584
ABSTRACT:
A TEOS deposition method. A mixture of gases is introduced into a process chamber, in which the mixture of gases comprises tetra-ethyl-ortho-silicate (TEOS) and N2. Compressive stress of a TEOS oxide film is increased by activating the mixture of gases.
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Chang Hong-Jui
Cheng Yi-Lung
Wang Ying-Lang
Perkins Pamela E
Smith Zandra
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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