Radiant energy – Inspection of solids or liquids by charged particles – Analyte supports
Patent
1981-07-20
1984-06-05
Anderson, Bruce C.
Radiant energy
Inspection of solids or liquids by charged particles
Analyte supports
2504421, G01N 2100
Patent
active
044530803
ABSTRACT:
An end station for a material treatment apparatus such as ion implantation system employs a dish shaped disc for sequentially presenting a plurality of semiconductor wafers arranged on the periphery of the disc to an ion beam. Coolant is circulated via rotating joints through channels in a disc to maintain same at a preselected base temperature. A thin layer of thermally conductive resilient material is disposed between each semiconductor wafer and the disc. Centrifugal force acting to press the wafer against the resilient material establishes good thermal contact therebetween and further compression of the resilient material increases the thermal conductance of the layer whereby the temperature of the wafers under implantation is selectably controlled. In a closed loop system, wafer temperature and the temperature of the cooled dish-shaped disc are monitored by infrared sensor apparatus and the average wafer temperature signal is compared to a stable reference for deriving an error signal which is employed to alter the thermal impedance of the resilient layer.
REFERENCES:
patent: 3993018 (1976-11-01), Kranik et al.
patent: 4155011 (1979-05-01), Mark
Anderson Bruce C.
Berkowitz Edward H.
Cole Stanley Z.
Varian Associates Inc.
LandOfFree
Temperature control of a workpiece under ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Temperature control of a workpiece under ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature control of a workpiece under ion implantation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1499622