Temperature control of a workpiece under ion implantation

Radiant energy – Inspection of solids or liquids by charged particles – Analyte supports

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

2504421, G01N 2100

Patent

active

044530803

ABSTRACT:
An end station for a material treatment apparatus such as ion implantation system employs a dish shaped disc for sequentially presenting a plurality of semiconductor wafers arranged on the periphery of the disc to an ion beam. Coolant is circulated via rotating joints through channels in a disc to maintain same at a preselected base temperature. A thin layer of thermally conductive resilient material is disposed between each semiconductor wafer and the disc. Centrifugal force acting to press the wafer against the resilient material establishes good thermal contact therebetween and further compression of the resilient material increases the thermal conductance of the layer whereby the temperature of the wafers under implantation is selectably controlled. In a closed loop system, wafer temperature and the temperature of the cooled dish-shaped disc are monitored by infrared sensor apparatus and the average wafer temperature signal is compared to a stable reference for deriving an error signal which is employed to alter the thermal impedance of the resilient layer.

REFERENCES:
patent: 3993018 (1976-11-01), Kranik et al.
patent: 4155011 (1979-05-01), Mark

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Temperature control of a workpiece under ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Temperature control of a workpiece under ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature control of a workpiece under ion implantation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1499622

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.