Techniques for temperature controlled ion implantation

Details Techniques for temperature controlled ion implantation Techniques for temperature controlled ion implantation

2011-08-09

2011-08-09

Padgett, Marianne L (Department: 1715)

Coating processes

Measuring, testing, or indicating

C427S009000, C427S523000, C427S526000, C438S014000, C438S005000, C438S369000

Reexamination Certificate

active

07993698

ABSTRACT:
Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

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Machine translation of JP 09-082267 A.
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