Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2008-03-27
2010-06-22
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S130000, C438S107000, C438S006000, C438S240000, C257SE21596, C257S296000, C257S700000, C257S750000
Reexamination Certificate
active
07741231
ABSTRACT:
Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or mole vias and a plurality of decoupling capacitors integrated therein, the at least one interposer structure being configured to allow for one or more of the plurality of decoupling capacitors to be selectively deactivated. In another aspect, a method of fabricating an electronic device comprising at least one interposer structure having one or more vias and a plurality of decoupling capacitors integrated therein comprises the following step. One or more of the plurality of decoupling capacitors are selectively deactivated.
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Horton Raymond R.
Knickerbocker John U.
Sprogis Edmund J.
Tsang Cornelia K.
Baptiste Wilner Jean
International Business Machines - Corporation
Ryan & Mason & Lewis, LLP
Smith Matthew
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