Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-01-23
2009-06-09
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000
Reexamination Certificate
active
07545041
ABSTRACT:
Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
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Allen Scott D.
Babich Katherina E.
Holmes Steven J.
Mahorowala Arpan P.
Pfeiffer Dirk
International Business Machines - Corporation
Morris, Esq. Daniel P.
Nguyen Cuong Q
Ryan & Mason & Lewis, LLP
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